PART |
Description |
Maker |
RJK03M1DPA-00-J5A RJK03M1DPA-15 |
30V, 50A, 2.3mΩmax.N Channel Power MOS FET 30V, 50A, 2.3mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03M3DPA-00-J5A RJK03M3DPA-15 |
30V, 40A, 3.9mΩmax.N Channel Power MOS FET 30V, 40A, 3.9mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
2SK2103 A5800287 2SK2103T100 |
Transistors > MOS FET > Small Signal MOS FET From old datasheet system Small switching (30V, 2A) Small switching (30V/ 2A)
|
ROHM[Rohm]
|
RJK03M6DPA RJK03M6DPA-00-J5A |
30V, 30A, 9.4m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0301DPB-02-15 |
30V, 60A, 2.8mΩ max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SK1273 2SK1273-T2 2SK1273-T1 |
N-channel power MOS FET N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
UPA1770 UPA1770G PA1770 G14055EJ1V0DS00 UPA1770G-E |
P-channel enhancement type power MOS FET(Dual type) SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor From old datasheet system
|
NEC[NEC]
|
2SK2938 |
Silicon N Channel MOS FET(N娌??MOSFET) Silicon N Channel MOS FET(N沟道MOSFET) 通道场效应晶体管(不适用沟道MOSFET的) From old datasheet system
|
Hitachi,Ltd.
|
3SK300 |
Silicon N Channel MOS FET Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|